rbpu_datasheet/pin_name.csv

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Pin Number,Pin Type,Pin Name,DISCRIPTION,,,,,,,
F5 G5 H5 C9 D9 G9 H9 K9 L9,POWER,DVDD,数字模块1.0V电源采用DVDD供电与其他DVDD作磁珠隔离,,,,,,,9
B5 C5 D5,POWER,DVDD18,数字模块1.8V电源采用DVDD18供电,,,,,,,3
A1 D1 F1 J1 M1 C2 G2 M2 B3 F3 J3 L3 N3 C4 E4 H4 L4 N4 A5 E5 J5 K5 M5 B6 E6 M6 A7 D7 L7 N7 C8 D8 G8 H8 J8 K8 L8 N8 M9 N9,GROUND,DGND,数字模块地与GND间作磁珠隔离,,,,,,,40
L10 M10,POWER,ADC_AVDD,ADC模块数字1.0V电源采用DVDD供电与其他DVDD作磁珠隔离,,,,,,,2
K11 L11,POWER,ADC_AVDD18,ADC模块模拟1.8V电源采用VDD18_1供电,,,,,,,2
A9 E9 F9 C10 D10 J10 N10 B11 E11 H11 M11 B12 C12 E12 G12 H12 K12 M12 A13 D13 F13 J13 N13,GROUND,AGND,模拟地,,,,,,,23
J9 K10 F11 F12,POWER,PLL_AVDD,PLL模块模拟1.0V电源采用VDD_2供电与其他VDD_2作磁珠隔离,,,,,,,4
159,POWER,VCO_VDD,VCO模块模拟1.0V电源采用VDD_2供电与其他VDD_2作磁珠隔离,,,,,,,
E10 F10,POWER,PLL_VDD18,PLL模块模拟1.8V电源采用VDD18_2供电,,,,,,,2
144 155,GROUND,PLL_GND,PLL模块模拟地采用全局地GND,,,,,,,
148,GROUND,PLL_DGND,PLL模块数字地与GND间作磁珠隔离,,,,,,,
157 158,GROUND,VCO_GND,VCO模块模拟地采用全局地GND,,,,,,,
193 194 197 198 201 202 205 206,POWER,AVDD_P2S,DAC模块模拟1.0V电源采用VDD_3供电与其他VDD_3作磁珠隔离,,,,,,,
181 184 187 190 ,POWER,AVDD_ENCODER,DAC模块模拟1.0V电源采用VDD_3供电与其他VDD_3作磁珠隔离,,,,,,,
163,POWER,DAC_DVDD,DAC模块数字1.0V电源采用DVDD供电与其他DVDD作磁珠隔离,,,,,,,
179 182 185 188,POWER,DAC_AVDD18,DAC模块模拟1.8V电源采用VDD18_3供电,,,,,,,
165 166 167 169 171 172 173 174,GROUND,DAC_AGND,DAC模块模拟地采用全局地GND,,,,,,,
178 191 195 199 203,GROUND,DAC_AGND_S,DAC模块模拟地S采用全局地GND,,,,,,,
180 183 186 189,GROUND,AGND_ENCODER,ENCODER模块模拟地采用全局地GND,,,,,,,
192 196 200 204,GROUND,AGND_P2S,P2S模块模拟地采用全局地GND,,,,,,,
164 175 176 177,GROUND,DAC_DGND,DAC模块数字地与GND间作磁珠隔离,,,,,,,
B1 C1 E1 G1 H1 K1 L1 A2 B2 D2 E2 F2 H2 J2 K2 L2 A3 C3 D3 E3 G3 H3 K3 A4 B4 D4 F4 G4 J4 K4 L5 L6,O/数字,loc_lvcmos<0:31>,loc_lvcmos[q*2+1:q*2]为解模频点q的反馈结果00、01、10、11电平分别对应0、1、2态和未定义态,,,,,,,32
D6 C7,I/数字,pi_chip_id<0:1>,读出芯片的ID编号可通过200欧电阻接I/O电源或地来设置芯片ID编号。,,,,,,,2
A6,O/数字,po_debug_out,内部调试信号输出不用的话1k电阻接地,,,,,,,1
C6,O/数字,po_pump_en,Pump使能信号输出,,,,,,,1
B7,OD/数字,po_read_req_n,数字开漏输出,上拉接控制器,读请求低有效,,,,,,,1
B8,OD/数字,po_intr_irq_n,数字开漏输出,上拉接控制器,异常请求低有效,,,,,,,1
A8, O/数字,po_miso, spi数据输出接4.7k上拉电阻到I/O电源,,,,,,,1
F6, I/数字,pi_mosi, spi数据输入接4.7k上拉电阻到I/O电源,,,,,,,1
F7, I/数字,pi_csn, spi芯片片选接4.7k上拉电阻到I/O电源,,,,,,,1
F8,SPI/数字,pi_sclk , spi芯片时钟接4.7k上拉电阻到I/O电源,,,,,,,1
E8,I/数字,pi_pb_rst_n,芯片复位信号,低有效,,,,,,,1
E7,I/数字,pi_sync_in,芯片同步触发信号,高有效,,,,,,,1
G7 H7 J7 K7, IO/数字, awg_gpio<3:0>, awg预留GPIO,,,,,,,4
G6 H6 J6 K6, IO/数字, daq_gpio<3:0>, daq预留GPIO,,,,,,,4
N1 N2,O/数字,GLB_FB_TX_P/N,反馈结果数据发送接口,,,,,,,2
M3 M4,O/数字,RSLT_PUSH_P/N,采集结果数据发送接口,,,,,,,2
M7 M8,I/数字,GLB_FB_RX_P/N,反馈结果数据接收接口,,,,,,,2
N5 N6,O/数字,LVDSTX_CLKP/N,时钟信号0-1V0-750MHz,,,,,,,
N11 N12,I/模拟,ADC_VINN/P_A/B,ADC输入信号,,,,,,,2
133 134,I/模拟,ADC_VR350 ADC_VR850,基准电压0.35/0.85V,需要去偶,,,,,,,
136,I/模拟,ADC_VBIAS_IREF_RES,偏置电路基准电流外接5.2K电阻并联10 uF去耦电容。,,,,,,,
137,I/模拟,ADC_REF_SENSE,Bandgap电压内外部切换1.8 V选择内部Bandgap0.52V选择外部Bandgap,,,,,,,
146 147,I/模拟,CLK_REF_P/N,PLL参考时钟输入频率范围,,,,,,,
150,I/模拟,PLL_VREF520,外部520 mV偏置电压需要去偶,,,,,,,
151 154,IO/模拟,CP_OUT VCTRL,接片外滤波器,,,,,,,
153,/,BIAS_CAP,接片外电容100n,,,,,,,
H10,/,RES_2K,接片外电阻2K,,,,,,,1
A10,I/模拟,VREF500IN,外部500 mV偏置电压需要去偶,,,,,,,1
A12,O/模拟,DAC_VBIAS_IREF_RES,接5KΩ电阻到地需要去偶,,,,,,,1
A11,O/模拟,PORT_BIAS_TB,加滤波电容10uF*11uF*10.1uF*3,,,,,,,1
B13 C13,O/模拟,DAC_VOUTP/N,内部为50Ω电阻网络外部。。。,,,,,,,2